منابع مشابه
Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications
The coherent generation and detection of terahertz (THz) radiation using ultrashort laser pulses and photoconductive antennae have been intensively studied during the last decade. The best results were achieved when low-temperature MBE grown GaAs (LTG GaAs) or ion-implanted GaAs layers were used as a basis for THz emitters and detectors. The ultimate performance of these devices depends on carr...
متن کاملGaInNAs ( Sb ) lasers grown on GaAs by MBE
We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930A/cm per quantum well, a differential quantum efficiency of 0.30W/A (both facets), an ex...
متن کاملPhotomodulated Reflectance Spectroscopy of GaAsBi/GaAs layers grown by MBE
The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...
متن کاملExploring the Growth Mechanisms of GaAs Nanowires Grown by MBE
We have successfully grown GaAs nanowires by Molecular Beam Epitaxy. In this work, we investigate the principal growth mechanisms underlying nanowire growth by measuring the morphology of the nanowires and comparing them to a simple growth model. From this, we are able to make several conclusions. The results of the data show that Adatom Diffusion contributes more to the overall growth rate tha...
متن کاملSpin Lifetime Measurements in MBE-Grown GaAs Epilayers
Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic field (Hanle effect). The lifetimes thus obtained were 14 and 26 ns for samples nominally doped ...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 1998
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(98)80002-1